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| Semiconductor DN050S NPN Silicon Transistor Features * Extremely low collector-to-emitter saturation voltage ( VCE(SAT)=0.07V Typ. @IC /IB =100mA/10mA) * Suitable for low voltage large current drivers * Complementary pair with DP050S * Switching Application. Ordering Information Type NO. DN050S Marking N02 Package Code SOT-23F Outline Dimensions 2.40.1 1.60.1 unit : mm 1 2.90.1 1.90 BSC 3 2 0.150.05 0.40.05 PIN Connections 1. Base 2. Emitter 3. Collector www..com KST-2115-000 0.90.1 0~0.1 1 DN050S Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25 C) Symbol VCBO VCEO VEBO IC PC Tj T stg Ratings 15 12 5 500 200 150 -55~150 Unit V V V mA mW C C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25 C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) fT C ob Test Condition IC=50A, I E =0 IC=1mA, IB =0 IE =50A, IC =0 VCB=12V, IE =0 VEB =5V, I C=0 VCE=1V, IC =100mA VCE=1V, IC =500mA IC=100mA, IB =10mA IC=100mA, IB =10mA VCE=5V, IC =20mA VCB=10V, IE =0, f=1MHz Min. 15 12 5 200 70 - Typ. 120 4.5 Max. 0.1 0.1 450 0.25 1.2 - Unit V V V A A V V MHz pF www..com KST-2115-000 2 DN050S Electrical Characteristic Curves Fig. 2 IC - VBE Fig. 1 PC - Ta Fig. 3 hFE - IC Fig. 4 IC - VCE Fig. 5 VCE(sat) - IC www..com KST-2115-000 3 |
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